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this is preliminary information on a new product now in dev elopment or undergoing evaluati on. details are subject to change without notice. march 2013 docid023707 rev 2 1/29 29 tsv711, TSV712, tsv714 high accuracy (200 v) micropower 14 a, 150 khz 5 v cmos operational amplifiers datasheet - preliminary data features ? low offset voltage: 200 v max. ? low power consumption: 10 a at 5 v ? low supply voltage: 1.5 v to 5.5 v ? gain bandwidth product: 150 khz typ. ? low input bias current: 1 pa typ. ? rail-to-rail input and output ? emi hardened operational amplifiers ? high tolerance to esd: 4 kv hbm ? extended temperature range: -40 to +125 c benefits ? higher accuracy without calibration ? energy saving ? guaranteed operation on low-voltage battery related products ? see the tsv73 series (900 khz for 60 a) for higher gain bandwidth products applications ? battery powered applications ? portable devices ? signal conditioning ? active filtering ? medical instrumentation description the tsv71x series of single, dual, and quad operational amplifiers offer low-voltage operation, rail-to-rail input and output, and excellent accuracy (v io lower than 200 v at 25 c). these devices benefit from stmicroelectronics ? 5 v cmos technology and offer an excellent speed/power consumption ratio (150 khz typical gain bandwidth) while consuming less than 14 a at 5 v. the tsv71x series also feature an ultra-low input bias current. the single version (tsv711), the dual version (TSV712), and the quad version (tsv714) are housed in the smallest industrial packages. these characteristics make the tsv71x family ideal for sensor interfaces, battery-powered and portable applications, and active filtering. single (tsv711) sc70-5 dfn8 2x2 miniso-8 dual (TSV712) quad (tsv714) qfn16 3x3 tssop14 www.st.com
contents tsv711, TSV712, tsv714 2/29 docid023707 rev 2 contents 1 pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 absolute maximum ratings and operating c onditions . . . . . . . . . . . . . 4 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.1 operating voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2 rail-to-rail input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.3 rail-to-rail output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 input offset voltage drift over temperature . . . . . . . . . . . . . . . . . . . . . . . . 16 4.5 long-term input offset voltage drift . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.6 initialization time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.7 pcb layouts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.8 macromodel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5.1 sc70-5 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.2 dfn8 2x2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.3 miniso-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.4 qfn16 3x3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5.5 tssop14 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
docid023707 rev 2 3/29 tsv711, TSV712, tsv714 pin connections 1 pin connections figure 1. pin connections (top view) 1. the exposed pads of the qfn16 3x3 c an be connected to vcc- or left floating. 9&& 9&& 287 ,1 ,1 287 ,1 ,1 9&& 9&& 287 ,1 ,1 287 ,1 ,1 9&& ,1 287 9&& ,1 ,1 9&& 1& ,1 ,1 9&& 1& ,1 ,1 287 287 ,1 ,1 287 287 ,1 1& dfn8 2x2 (TSV712) m iniso-8 (TSV712) dual tssop14 (tsv714) qfn16 3x3 (tsv714) sc70-5 (tsv711) quad single
absolute maximum ratings and operating conditions tsv711, TSV712, tsv714 4/29 docid023707 rev 2 2 absolute maximum ratings and operating conditions table 1. absolute maximum ratings (amr) symbol parameter value unit v cc supply voltage (1) 1. all voltage values, except the differential volt age are with respect to the network ground terminal. 6 v v id differential input voltage (2) 2. the differential voltage is a non-inverting input terminal with respect to the inve rting input terminal. the TSV712 and tsv714 devices include an internal differentia l voltage limiter that clamps internal differential voltage at 0.5 v. v cc v in input voltage (3) 3. v cc - v in must not exceed 6 v, v in must not exceed 6 v. v cc- - 0.2 to v cc+ + 0.2 i in input current (4) 4. input current must be limited by a resistor in series with the inputs. 10 ma t stg storage temperature -65 to +150 c r thja thermal resistance junction-to-ambient (5)(6) sc70-5 dfn8 2x2 miniso8 qfn16 3x3 tssop14 5. short-circuits can c ause excessive heating and destructive dissipation. 6. r th are typical values. 205 120 190 45 100 c/w r thjc thermal resistance junction-to-case dfn8 2x2 33 t j maximum junction temperature 150 c esd hbm: human body model (7) 7. human body model: 100 pf discharged through a 1.5 k resistor between two pins of the device, done for all couples of pin combinations with other pins floating. 4kv mm: machine model for tsv711 (8) 8. machine model: a 200 pf cap is charged to the spec ified voltage, then discharged directly between two pins of the device with no external se ries resistor (internal resistor < 5 ), done for all couples of pin combinations with other pins floating. 150 v mm: machine model for TSV712 (8) 200 mm: machine model for tsv714 (8) 300 cdm: charged device model except miniso8 (9) 9. charged device model: all pins plus package ar e charged together to the specified voltage and then discharged directly to ground. 1.5 kv cdm: charged device model for miniso8 (9) 1.3 latchup immunity 200 ma
docid023707 rev 2 5/29 tsv711, TSV712, tsv714 absolute maxi mum ratings and operating conditions table 2. operating conditions symbol parameter value unit v cc supply voltage 1.5 to 5.5 v v icm common mode input voltage range v cc- - 0.1 to v cc+ + 0.1 t oper operating free air temperature range -40 to +125 c
electrical characteristics tsv711, TSV712, tsv714 6/29 docid023707 rev 2 3 electrical characteristics table 3. electrical characteristics at v cc+ = 1.8 v with v cc- = 0 v, v icm = v cc /2, t = 25 c, and r l = 10 k connected to v cc /2 (unless otherwise specified) symbol parameter conditions min. typ. max. unit dc performance v io input offset voltage (v icm = 0 v) t = 25 c 200 v -40 c < t< 85 c 850 -40 c < t< 125 c 1200 v io / t input offset voltage drift -40 c < t< 125 c (1) 10 v/c i io input offset current (v out = v cc /2) t = 25 c 1 10 (2) pa -40 c < t< 125 c 1 300 (2) i ib input bias current (v out = v cc /2) t = 25 c 1 10 (2) -40 c < t< 125 c 1 300 (2) cmr common mode rejection ratio 20 log ( v icm / v io ) v icm = 0 v to v cc , v out = v cc /2, r l > 1 m t = 25 c 69 88 db -40 c < t< 125 c 61 a vd large signal voltage gain v out = 0.5 v to (v cc - 0.5 v) t = 25 c 95 -40 c < t< 125 c 85 v oh high level output voltage (v oh = v cc - v out ) t = 25 c 75 mv -40 c < t< 125 c 80 v ol low level output voltage t = 25 c 40 -40 c < t< 125 c 60 i out i sink ( v out = v cc) t = 25 c 6 12 ma -40 c < t< 125 c 4 i source (v out = 0 v) t = 25 c 5 7 -40 c < t< 125 c 3 i cc supply current (per channel, v out = v cc /2, r l > 1 m ) t = 25 c 9 14 a -40 c < t< 125 c 16
docid023707 rev 2 7/29 tsv711, TSV712, tsv714 electrical characteristics ac performance gbp gain bandwidth product r l = 10 k , c l = 100 pf 100 120 khz f u unity gain frequency 100 m phase margin 45 degrees g m gain margin 19 db sr slew rate (3) r l = 10 k , c l = 100 pf, v out = 0.5 v to v cc - 0.5 v 0.04 v/ s e n equivalent input noise voltage f = 1 khz 100 f = 10 khz 96 t init initialization time (4) t = 25 c 5 ms -40 c < t< 125 c 60 1. see section 4.4: input offset voltage drift over temperature . 2. guaranteed by characterization. 3. slew rate value is calculated as the average between positive and negative slew rates. 4. initialization time is defined as the delay after power-up to guarantee operation within specified per formances. guaranteed by design. see section 4.6: initialization time . table 3. electrical characteristics at v cc+ = 1.8 v with v cc- = 0 v, v icm = v cc /2, t = 25 c, and r l = 10 k connected to v cc /2 (unless otherwise specified) (continued) symbol parameter conditions min. typ. max. unit nv hz ----------- -
electrical characteristics tsv711, TSV712, tsv714 8/29 docid023707 rev 2 table 4. electrical characteristics at v cc+ = 3.3 v with v cc- = 0 v, v icm = v cc /2, t = 25 c, and r l = 10 k connected to v cc /2 (unless otherwise specified) symbol parameter conditions min. typ. max. unit dc performance v io input offset voltage t = 25 c 200 v -40 c < t< 85 c 850 -40 c < t< 125 c 1200 v io / t input offset voltage drift -40 c < t< 125 c (1) 10 v/c v io long-term input offset voltage drift t = 25 c (2) 0.3 i io input offset current (v out = v cc /2) t = 25 c 1 10 (3) pa -40 c < t< 125 c 1 300 (3) i ib input bias current (v out = v cc /2) t = 25 c 1 10 (3) -40 c < t< 125 c 1 300 (3) cmr common mode rejection ratio 20 log ( v icm / v io ) v icm = 0 v to v cc , v out = v cc /2, r l > 1 m t = 25 c 80 100 db -40 c < t< 125 c 69 a vd large signal voltage gain v out = 0.5 v to (v cc - 0.5 v) t = 25 c 95 -40 c < t< 125 c 85 v oh high level output voltage (v oh = v cc - v out ) t = 25 c 75 mv -40 c < t< 125 c 80 v ol low level output voltage t = 25 c 40 -40 c < t< 125 c 60 i out i sink ( v out = v cc) t = 25 c 20 34 ma -40 c < t< 125 c 15 i source (v out = 0 v) t = 25 c 20 26 -40 c < t< 125 c 15 i cc supply current (per channel, v out = v cc /2, r l > 1 m ) t = 25 c 9 14 a -40 c < t< 125 c 16 v month ---------------------------
docid023707 rev 2 9/29 tsv711, TSV712, tsv714 electrical characteristics ac performance gbp gain bandwidth product r l = 10 k , c l = 100 pf 100 120 khz f u unity gain frequency 100 m phase margin 45 degrees g m gain margin 19 db sr slew rate (4) r l = 10 k , c l = 100 pf, v out = 0.5 v to v cc - 0.5 v 0.05 v/ s e n equivalent input noise voltage f = 1 khz 100 f = 10 khz 96 t init initialization time (5) t = 25 c 5 ms -40 c < t< 125 c 50 1. see section 4.4: input offset voltage drift over temperature . 2. typical value is based on the v io drift observed after 1000h at 125 c extrapo lated to 25 c using the arrhenius law and assuming an activation energy of 0.7 ev . the operational amplifier is aged in follower mode configuration. see section 4.5: long-term input offset voltage drift . 3. guaranteed by characterization. 4. slew rate value is calculated as the average between positive and negative slew rates. 5. initialization time is defined as the delay after power -up which guarantees operation wi thin specified performances. guaranteed by design. see section 4.6: initialization time . table 4. electrical characteristics at v cc+ = 3.3 v with v cc- = 0 v, v icm = v cc /2, t = 25 c, and r l = 10 k connected to v cc /2 (unless otherwise specified) (continued) symbol parameter conditions min. typ. max. unit nv hz ----------- -
electrical characteristics tsv711, TSV712, tsv714 10/29 docid023707 rev 2 table 5. electrical characteristics at v cc+ = 5 v with v cc- = 0 v, v icm = v cc /2, t = 25 c, and r l = 10 k connected to v cc /2 (unless otherwise specified) symbol parameter conditions min. typ. max. unit dc performance v io input offset voltage t = 25 c 200 v -40 c < t< 85 c 850 -40 c < t< 125 c 1200 v io / t input offset voltage drift -40 c < t< 125 c (1) 10 v/c v io long-term input offset voltage drift t = 25 c (2) 0.7 i io input offset current (v out = v cc /2) t = 25 c 1 10 (3) pa -40 c < t< 125 c 1 300 (3) i ib input bias current (v out = v cc /2) t = 25 c 1 10 (3) -40 c < t< 125 c 1 300 (3) cmr common mode rejection ratio 20 log ( v icm / v io ) v icm = 0 v to v cc , v out = v cc /2, r l > 1 m t = 25 c 74 94 db -40 c < t< 125 c 73 svr supply voltage rejection ratio 20 log ( v cc / v io ) v cc = 1.5 to 5.5 v, v ic = 0 v, r l > 1 m t = 25 c 71 90 -40 c < t< 125 c 71 a vd large signal voltage gain v out = 0.5 v to (v cc - 0.5 v) t = 25 c 95 -40 c < t< 125 c 85 emirr emi rejection ratio emirr = 20 log (v rfpeak / v io ) v rf = 100 mv rfpeak, f = 400 mhz 38 (4) v rf = 100 mv rfpeak, f = 900 mhz 50 (4) v rf = 100 mv rfpeak , f = 1800 mhz 60 (4) v rf = 100 mv rfpeak , f = 2400 mhz 63 (4) v oh high level output voltage (v oh = v cc - v out ) t = 25 c 75 mv -40 c < t< 125 c 80 v ol low level output voltage t = 25 c 40 -40 c < t< 125 c 60 i out i sink ( v out = v cc) t = 25 c 35 56 ma -40 c < t< 125 c 20 i source (v out = 0 v) t = 25 c 35 45 -40 c < t< 125 c 20 i cc supply current (per channel, v out = v cc /2, r l > 1 m ) t = 25 c 10 14 a -40 c < t< 125 c 16 v month ---------------------------
docid023707 rev 2 11/29 tsv711, TSV712, tsv714 electrical characteristics ac performance gbp gain bandwidth product r l = 10 k , c l = 100 pf 110 150 khz f u unity gain frequency 120 m phase margin 45 degrees g m gain margin 19 db sr slew rate (5) r l = 10 k , c l = 100 pf, v out = 0.5 v to v cc - 0.5 v 0.06 v/ s e n low-frequency peak-to-peak input noise bandwidth: f = 0.1 to 10 hz 10 v pp e n equivalent input noise voltage f = 1 khz 100 f = 10 khz 96 thd+n total harmonic distortion + noise f in = 1 khz, a cl = 1, r l = 100 k , v icm = (v cc - 1 v)/2, bw = 22 khz, v out = 0.5 v pp 0.008 % t init initialization time (6) t = 25 c 5 ms -40 c < t< 125 c 50 1. see section 4.4: input offset voltage drift over temperature . 2. typical value is based on the v io drift observed after 1000h at 125 c extrapo lated to 25 c using the arrhenius law and assuming an activation energy of 0.7 ev. the operational amplifier is aged in follower mode configuration. see section 4.5: long-term input offset voltage drift . 3. guaranteed by characterization. 4. tested on sc70-5 package. 5. slew rate value is calculated as the average between positive and negative slew rates. 6. initialization time is defined as the delay after power-up to guarantee operation within specified performances. guaranteed by design. see section 4.6: initialization time . table 5. electrical characteristics at v cc+ = 5 v with v cc- = 0 v, v icm = v cc /2, t = 25 c, and r l = 10 k connected to v cc /2 (unless otherwise specified) (continued) symbol parameter conditions min. typ. max. unit nv hz ----------- -
electrical characteristics tsv711, TSV712, tsv714 12/29 docid023707 rev 2 figure 2. supply current vs. supply voltage at v icm = v cc /2 figure 3. input offset voltage distribution at v cc = 5 v, v icm = v cc /2 figure 4. input offset voltage distribution at v cc = 3.3 v, v icm = v cc /2 figure 5. input offset voltage temperature coefficient distribution -250 -200 -150 -100 -50 0 50 100 150 200 250 0 5 10 15 20 25 30 v cc = 3.3 v v icm = 1.65 v t = 25 ?c population (%) input offset voltage (?) figure 6. input offset voltage vs. input common mode voltage figure 7. input offset voltage vs. temperature
docid023707 rev 2 13/29 tsv711, TSV712, tsv714 electrical characteristics figure 8. output current vs. output voltage at v cc = 1.5 v figure 9. output current vs. output voltage at v cc = 5 v figure 10. output current vs. supply voltage figure 11. bode diagram at v cc = 1.5 v figure 12. bode diagram at v cc = 5 v figure 13. closed-loop gain diagram vs. capacitive load
electrical characteristics tsv711, TSV712, tsv714 14/29 docid023707 rev 2 figure 14. positive slew rate figure 15. negative slew rate figure 16. slew rate vs. supply voltage figure 17. noise vs. frequency figure 18. 0.1 hz to 10 hz noise figure 19. thd+n vs. frequency
docid023707 rev 2 15/29 tsv711, TSV712, tsv714 electrical characteristics figure 20. thd+n vs. output voltage figur e 21. output impedance vs. frequency in closed-loop configuration
application information tsv711, TSV712, tsv714 16/29 docid023707 rev 2 4 application information 4.1 operating voltages the tsv71x series of devices can operate from 1.5 v to 5.5 v. the parameters are fully specified for 1.8 v, 3.3 v, and 5 v power supplie s. however, they are ve ry stable in the full v cc range and several characteri zation curves show tsv71x de vice characteristics at 1.5 v. in addition, the main specifications are guaranteed in the extended temperature range from -40 c to +125 c. 4.2 rail-to-rail input the tsv711, TSV712, and tsv714 devices have a rail-to-rail input, and the input common mode range is extended from v cc- - 0.1 v to v cc+ + 0.1 v. 4.3 rail-to-rail output the output levels of the tsv71x operational amplifiers can go close to the rails: to a maximum of 40 mv below the upper rail and to a maximum of 75 mv above the lower rail when a 10 k resistive load is connected to v cc /2. 4.4 input offset voltage drift over temperature the maximum input voltage drift over the temperature variation is defined as the offset variation related to offset value measured at 25 c. the operational amplifier is one of the main circuits of the signal conditioning chai n, and the amplifier input offset is a major contributor to the chain accuracy. the signal chain accuracy at 25 c can be compensated during production at application level. the ma ximum input voltage drift over temperature enables the system designer to anticipate the effect of temperature variations. the maximum input voltage drift over temperature is computed using equation 1 . equation 1 with t = -40 c and 125 c. the datasheet maximum value is guaranteed by a measurement on a representative sample size ensuring a c pk (process capability in dex) greate r than 1.33. v io t ----------- - max v io t () v io 25 c () ? t25 c ? --------------------------------------------------- =
docid023707 rev 2 17/29 tsv711, TSV712, tsv714 application information 4.5 long-term input of fset voltage drift to evaluate product reliability, two ty pes of stress acceleration are used: ? voltage acceleration, by changing the applied voltage ? temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. the voltage acceleration has been defined bas ed on jedec results, and is defined using equation 2 . equation 2 where: a fv is the voltage acceleration factor is the voltage acceleration constant in 1/v, constant technology parameter ( = 1) v s is the stress voltage used for the accelerated test v u is the voltage used for the application the temperature acceleration is driven by the arrhenius model, and is defined in equation 3 . equation 3 where: a ft is the temperature acceleration factor e a is the activation energy of the technology based on the failure rate k is the boltzmann constant (8.6173 x 10 -5 ev.k -1 ) t u is the temperature of the die when v u is used (k) t s is the temperature of the die under temperature stress (k) the final acceleration factor, a f , is the multiplication of the voltage acceleration factor and the temperature acceleration factor ( equation 4 ). equation 4 a f is calculated using the temperature and volt age defined in the mission profile of the product. the a f value can then be used in equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. a fv e v s v u ? () ? = a ft e e a k ------ 1 t u ------ 1 t s ------ ? ?? ?? ? = a f a ft a fv =
application information tsv711, TSV712, tsv714 18/29 docid023707 rev 2 equation 5 to evaluate the op-amp reliability, a fo llower stress conditio n is used where v cc is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by jedec rules). the v io drift (in v) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see equation 6 ). equation 6 the long term drift parameter ( v io ), estimating the reli ability performance of the product, is obtained using the ratio of the v io (input offset voltage value) dr ift over the square root of the calculated number of months ( equation 7 ). equation 7 where v io drift is the measured drift value in the specified test conditions after 1000 h stress duration. months a f 1000 h 12 months 24 h 365.25 days () ? = v cc maxv op with v icm v cc 2 ? == v io v io drift months () ------------------------------ =
docid023707 rev 2 19/29 tsv711, TSV712, tsv714 application information 4.6 initialization time the tsv71x series of devices use a proprietary trimming topology that is initiated at each device power-up and allows excellent v io performance to be achieved. the initialization time is defined as the delay after power-up wh ich guarantees operation within specified performances. during this period, the current consumption ( i cc ) and the input offset voltage ( v io ) can be different to the typical ones. figure 22. initialization phase the initialization time is v cc and temperature dependent. table 6 sums up the measurement results for different supply voltages and for temperatures varying from -40 c to 125 c. 4.7 pcb layouts for correct operation, it is advised to add a 10 nf decoupling capacitors as close as possible to the power supply pins. table 6. initialization time measurement results v cc (v) temperature: -40 c temperature: 25 c temperature: 125 c t init (ms) i cc phase 1 (ma) t init (ms) i cc phase 1 (ma) t init (ms) i cc phase 1 (ma) 1.8 37 0.33 3.2 0.40 0.35 0.46 3.3 2.9 1.4 0.95 1.3 0.34 1.2 5 2.4 3.2 0.85 2.4 0.31 2.9
application information tsv711, TSV712, tsv714 20/29 docid023707 rev 2 4.8 macromodel accurate macromodels of the tsv71x devices are available on the stmicroelectronics? website at www.st.com . these model are a trade-off between accuracy and complexity (that is, time simulation) of the tsv71x operat ional amplifiers. they emulate the nominal performance of a typical device within the sp ecified operating condit ions mentioned in the datasheet. they also help to validate a design approach and to select the right operational amplifier, but they do not replace on-board measurements .
docid023707 rev 2 21/29 tsv711, TSV712, tsv714 package information 5 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark.
package information tsv711, TSV712, tsv714 22/29 docid023707 rev 2 5.1 sc70-5 package information figure 23. sc70-5 package mechanical drawing table 7. sc70-5 package mechanical data symbol dimensions millimeters inches min. typ. max. min. typ. max. a 0.80 1.10 0.032 0.043 a1 00.10 0.004 a2 0.80 0.90 1.00 0.032 0.035 0.039 b 0.15 0.30 0.006 0.012 c 0.10 0.22 0.004 0.009 d 1.80 2.00 2.20 0.071 0.079 0.087 e 1.80 2.10 2.40 0.071 0.083 0.094 e1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 0.025 e1 1.30 0.051 l 0.26 0.36 0.46 0.010 0.014 0.018 < 0 8 0 8 seating plane gauge plane dimensions in mm side view top view coplanar leads
docid023707 rev 2 23/29 tsv711, TSV712, tsv714 package information 5.2 dfn8 2x2 pack age information figure 24. dfn8 2x2 package mechanical drawing table 8. dfn8 2x2 package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.70 0.75 0.80 0.028 0.030 0.031 a1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 d 2.00 0.079 e 2.00 0.079 e 0.50 0.020 l 0.045 0.55 0.65 0.018 0.022 0.026 n8 8 h / %277209,(: 3lq,' 3,1,1'(;$5($ ( & $ $ 3/$1( 6($7,1* 7239,(: & & [ [ ' 3,1,1'(;$5($ esofv & & $ % % $ & 6,'(9,(: *$06&%
package information tsv711, TSV712, tsv714 24/29 docid023707 rev 2 5.3 miniso-8 package information figure 25. miniso-8 pack age mechanical drawing table 9. miniso-8 package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.1 0.043 a1 0 0.15 0 0.006 a2 0.75 0.85 0.95 0.030 0.033 0.037 b 0.22 0.40 0.009 0.016 c 0.08 0.23 0.003 0.009 d 2.80 3.00 3.20 0.11 0.118 0.126 e 4.65 4.90 5.15 0.183 0.193 0.203 e1 2.80 3.00 3.10 0.11 0.118 0.122 e 0.65 0.026 l 0.40 0.60 0.80 0.016 0.024 0.031 l1 0.95 0.037 l2 0.25 0.010 k0 8 0 8 ccc 0.10 0.004
docid023707 rev 2 25/29 tsv711, TSV712, tsv714 package information 5.4 qfn16 3x3 package information figure 26. qfn16 3x3 package mechanical drawing 4)1b[b9bb&
package information tsv711, TSV712, tsv714 26/29 docid023707 rev 2 figure 27. qfn16 3x3 footprint recommendation table 10. qfn16 3x3 mm package mechanical data (pitch 0.5 mm) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.80 0.90 1.00 0.031 0.035 0.039 a1 0 0.05 0 0.002 a3 0.20 0.008 b 0.18 0.30 0.007 0.012 d 2.90 3.00 3.10 0.114 0.118 0.122 d2 1.50 1.80 0.059 0.071 e 2.90 3.00 3.10 0.114 0.118 0.122 e2 1.50 1.80 0.059 0.071 e 0.50 0.020 l 0.30 0.50 0.012 0.020 4)1b[b9birrwsulqwbb&
docid023707 rev 2 27/29 tsv711, TSV712, tsv714 package information 5.5 tssop14 package information figure 28. tssop14 package mechanical drawing table 11. tssop14 package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a1.200.047 a1 0.05 0.15 0.002 0.004 0.006 a2 0.80 1.00 1.05 0.031 0.039 0.041 b 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.0089 d 4.90 5.00 5.10 0.193 0.197 0.201 e 6.20 6.40 6.60 0.244 0.252 0.260 e1 4.30 4.40 4.50 0.169 0.173 0.176 e 0.65 0.0256 l 0.45 0.60 0.75 0.018 0.024 0.030 l1 1.00 0.039 k0 8 0 8 aaa 0.10 0.004
ordering information tsv711, TSV712, tsv714 28/29 docid023707 rev 2 6 ordering information 7 revision history table 12. order codes order code temperature range package packaging marking tsv711ict -40 c to +125 c sc70-5 tape and reel k1w TSV712iq2t dfn8 2x2 k1w TSV712ist miniso8 v712 tsv714iq4t qfn16 3x3 k1w tsv714ipt tssop14 tsv714ip table 13. document revision history date revision changes 26-sep-2012 1 initial internal release 26-mar-2013 2 initial public release. datasheet updated for two new products: TSV712 and tsv714. four new packages added: dfn8 2x2, miniso-8, qfn16 3x3, and tssop14. updated table 3 , table 4 , and table 5 . section 4: application information : re-written
docid023707 rev 2 29/29 tsv711, TSV712, tsv714 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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